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| 型號(hào) | 廠商 | 描述 | 文檔 | 詢價(jià) |
| MT46V32M8P-5B:M TR | Micron(鎂光) | IC DDR SDRAM 256MBIT 5NS 66TSOP |  |
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| IS45S32200L-7TLA2-TR | ISSI | IC SDRAM 64M 143MHZ 86TSOP | |
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| SST39VF3202-70-4I-EKE | Microchip(美國(guó)微芯) | IC FLASH 32MBIT 70NS 48TSOP | |
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| CY62137EV30LL-45BVXI | Cypress(賽普拉斯) | IC SRAM 2MBIT 45NS 48VFBGA | |
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| IS45S32400F-7TLA1 | ISSI | IC SDRAM 128M 143MHZ 86TSOP | |
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| AS7C34098A-8TINTR | Alliance Memory | IC SRAM 4M 256X16 44-SOJ | |
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| AS7C34096A-8TINTR | Alliance Memory | IC SRAM 4M 512X8 36-SOJ | |
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| MX29GL128EHXFI-90G | Macronix(旺宏) | IC FLASH 128MBIT 90NS 64LFBGA | |
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| IS43LR32100D-6BLI | ISSI | IC DDR 32MBIT 90BGA | |
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| S34ML02G100TFB000 | Cypress(賽普拉斯) | IC FLASH 2GBIT 25NS 48TSOP | |
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| S34ML02G100BHB000 | Cypress(賽普拉斯) | IC FLASH 2GBIT 25NS 63BGA | |
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| IS61WV5128BLL-10BI-TR | ISSI | IC SRAM 4MB 8NS 36BGA | |
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| MT47H32M16NF-25E IT:H | Micron(鎂光) | IC DDR2 SDRAM 512MBIT 84FBGA | |
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| N25Q512A83G1241E | Micron(鎂光) | IC FLASH 512MBIT 108MHZ TBGA | |
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| N25Q512A13G1241E | Micron(鎂光) | IC FLASH 512MBIT 108MHZ TBGA | |
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| N25Q512A83GSF40F TR | Micron(鎂光) | IC FLASH 512MBIT 108MHZ 16SO | |
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| N25Q512A13GSF40F TR | Micron(鎂光) | IC FLASH 512MBIT 108MHZ 16SO | |
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| N25Q512A83GSF40G | Micron(鎂光) | IC FLASH 512MBIT 108MHZ 16SO | |
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| N25Q512A83G1240E | Micron(鎂光) | IC FLASH 512MBIT 108MHZ 24TBGA | |
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| IS42VM16400M-6BLI | ISSI | IC SDRAM 64MBIT 54BGA | |
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| IS41LV16257C-35TLI | ISSI | IC DRAM 4M 35NS 40TSOP | |
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| IS41LV16256C-35TLI | ISSI | IC DRAM 4M 35NS 40TSOP | |
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| 6116LA25TPG | IDT | IC SRAM 16KBIT 25NS 24DIP | |
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| IS61LV5128AL-10KLI | ISSI | IC SRAM 4MBIT 10NS 36SOJ | |
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| S29WS064RABBHW000 | Cypress(賽普拉斯) | IC FLASH MEM 64MBIT 84FBGA | |
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| CY14ME064J1-SXI | Cypress(賽普拉斯) | IC NVSRAM 64KBIT 3.4MHZ 8SOIC | |
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| IS61WV25616BLL-10KLI | ISSI | IC SRAM 4MB 8NS 44 SOJ | |
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| IS42S83200J-7TLI-TR | ISSI | IC SDRAM 256MB 143MHZ 54TSOP | |
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| IS42S83200J-6TLI-TR | ISSI | IC SDRAM 256MB 166MHZ 54TSOP | |
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| IS65WV12816BLL-55TLA3-TR | ISSI | IC SRAM 2MBIT 55NS 44TSOP | |
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| W979H6KBQX2E | Winbond(華邦) | 512MB LPDDR2 X16 400MHZ | |
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| W979H6KBVX2E | Winbond(華邦) | 512MB LPDDR2 X16 400MHZ | |
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| IS42SM32200M-6BLI-TR | ISSI | IC SDRAM 64MBIT 90BGA | |
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| IS65C1024AL-45TLA3 | ISSI | IC SRAM 1MBIT 45NS 32TSOP | |
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| S29VS064RABBHW010 | Cypress(賽普拉斯) | IC FLASH MEM 64MBIT 44VTBGA | |
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| W94AD6KBHX5I TR | Winbond(華邦) | 1G MDDR X16 200MHZ IND | |
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| IS42VM32200M-75BLI-TR | ISSI | IC SDRAM 64MBIT 90BGA | |
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| JS28F512M29EWLD | Micron(鎂光) | IC FLASH 512MBIT 110NS 56TSOP | |
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| S25FL256SAGMFBG00 | Cypress(賽普拉斯) | IC FLASH 256MBIT CMOS SPI 16SOIC | |
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| S25FL256SAGMFAG10 | Cypress(賽普拉斯) | IC FLASH 256MBIT CMOS SPI 16SOIC | |
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| S25FL256SDSMFBG01 | Cypress(賽普拉斯) | IC FLASH 256MBIT CMOS SPI 16SOIC | |
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| W94AD2KBJX5E TR | Winbond(華邦) | 1G MDDR X32 200MHZ | |
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| IS45S16160J-7TLA1-TR | ISSI | IC SDRAM 256MB 143MHZ 54TSOP | |
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| IS43DR16640B-25DBL-TR | ISSI | IC DDR2 1GB 400MHZ 84BGA | |
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| W29GL256PL9T | Winbond(華邦) | PF 256M-BIT 4KB UNIFORM SECTOR | |
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| W29GL256PH9T | Winbond(華邦) | PF 256M-BIT 4KB UNIFORM SECTOR | |
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| 71V3559S85PFG8 | IDT | IC SRAM 4.5MBIT 8.5NS 100TQFP | |
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| 71V3559S80PFG8 | IDT | IC SRAM 4.5MBIT 8NS 100TQFP | |
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| CY7C1019D-10VXIT | Cypress(賽普拉斯) | IC SRAM 1MBIT 10NS 32SOJ | |
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| N25Q256A13EF8A0F TR | Micron(鎂光) | IC FLASH 256MBIT 108MHZ SOIC | |
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